Dynamic Secondary Ion Mass Spectrometry (SIMS/DSIMS Analysis)
SIMS provides the elemental composition of materials from the surface to depths of 100 microns and beyond.
The detection sensitivity of the technique is in the ppm – ppb range for all elements from H – U. SIMS involves sputtering of an identifiable area on the sample with a beam of primary ions. The resulting secondary ions are mass-analyzed to produce mass spectra, depth profiles or chemical maps of the sample area.
- Monitoring of elemental composition with ppm – ppb sensitivity – allows ready identification of dopants, process contaminants, impurities and surface treatments
- Depth profiling from surface to depths of tens of microns- provides characterization of layer structures, buried features and interfaces
- Chemical mapping showing feature sizes down to <1 micron – provides clear diagnosis of fault areas
- Retrospective 3D analysis provides chemical maps and area-selected depth profiles from complex materials
- Cross sectional analysis gives extended information through a structure, particularly effective on complex, thick layer materials.
- Quantitative depth profiling of dopants & impurities in semiconductor substrates
- Small area profiling of semiconductor device features
- Compositional analysis of glass layer structures
- In-depth investigation of tribological surfaces including wear scars.
Typical Industries using SIMS
- Semiconductor Wafer and Device Manufacturers
- Solar Energy
- Medical Devices
SIMS - At a Glance
- Information: All elements and isotopes, quantification in some cases
- Detection limits: ppm - ppb range or lower for some elements
- Area Analysed: From ~1mm x 1mm to ~10µm x 10µm
- Sampling Depth: ~1nm
- Imaging: Yes
- Image Resolution: <1µm
- Data Output: Mass spectra, depth profiles and images