Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)
ToF-SIMS provides detailed chemical information from the surface of materials with unequivocal characterization of elements, chemical groups, polymers and surface additives.
The technique is non-destructive and highly surface specific with detection sensitivity in the ppm range for most elements. ToF-SIMS involves sputtering the sample area of interest with a pulsed beam of bismuth primary ions (Bin+ where n = 1-3). Elemental and molecular fragment ions formed at the surface are mass-analyzed to produce data in the form of mass spectra, chemical images or depth profiles. A feature of ToF-SIMS is the high mass resolution which allows accurate mass analysis for clear identification of empirical formulae of unknown materials.
- Elemental and molecular information from the uppermost 1-2 nm of the surface.
- Detailed chemical information and empirical formulae through the use of extensive library spectra and accurate mass analysis.
- Detection sensitivity in the ppm range for most elements.
- Chemical imaging of elements, their isotopes and molecular species with sub-micron lateral resolution.
- Retrospective mass spectral and imaging analysis of complex surfaces using Region Of Interest mode.
- Characterization of surface additives on polymer materials
- Investigation of stains and rinse residues on semiconductor wafers and devices
- Monitoring of surface cleaning treatments on medical devices
- Chemical imaging of contaminants and additives on polymer films.
Typical Industries using ToFSIMS
- Medical Devices